BS170 is an N-Channel Metal-Oxide-Semiconductor-Field-Effect-Transistor or MOSFET. It has a TO-92 package with 200V and 250mA ratings. Its synonym is Metal-Insulated-Semiconductor-Field-Effect-Transistor or MISFET.
Specification
- Drain-source voltage: 200V
- Continuous gate-source voltage: ±20
- Continuous drain current: 250mA
- Pulsed drain current: 500mA
- Power dissipation: 350mW
- Typical turn-on time: 6 to 15 ns
- Typical turn-off time: 12 to 15 ns
Application
- Switching and amplification
Instruction
- Exceeding the maximum limit of rating may damage the device
- Power dissipation of the device may result in lower continuous drain current
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