IRF1404 -40V 202A N-Channel Power MOSFET

Features

• Advanced process technology
• Ultra low on-resistance
• Dynamic dV/dt rating
• 175℃ operating temperature
• Fast switching
• Fully avalanche rated

Specification

• Continuous drain current
  • At 25℃: 202A
  • At 100℃: 143A
• Pulsed drain current: 808A
• Gate-to-source voltage: ±20V
• Drain-to-source breakdown voltage: 40V
• Gate threshold voltage: 2V to 4V
• Diode forward voltage: 1.5V
• Turn-on delay time: 17ns
• Rise time: 190ns
• Turn-off delay time: 46ns
• Fall time: 33ns
• Reverse recovery time: 78ns to 117ns
• Reverse recovery charge: 163nC to 25nC