Features
- Dynamic dv/dt capability
- Fully avalanche rated
- Advanced process technology
- Fast switching
- 175℃ operating temperature
Specification
- Drain-source voltage: 100V
- Drain-gate voltage: 100V
- Gate-source voltage: ±20V
- Continuous drain current:
- At 25℃: 57A
- At 100℃: 40A
- Pulsed drain current: 230A
- Maximum avalanche current: 28A
- Gate threshold voltage: 2V to 4V
- Drain-to-source leakage current: 25µA
- Gate-to-source forward leakage: 100nA
- Gate-to-source reverse leakage: -100nA
- Rise time: 58nS
- Fall time: 47nS
- Turn-on delay time: 12nS
- Turn-off delay time: 45nS
- Diode forward voltage: 1.2V
- Reverse recovery time: 140ns to 220ns
- Reverse recovery charge: 670nC to 1010nC
- Maximum power dissipation: 200W
- Operating temperature: -55℃ to 175℃
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