IRF540 100V 33A N-Channel Power MOSFET

Features

• Dynamic dv/dt capability
• Advanced process technology
• Ultra low on-resistance 
• Fully avalanche rated
• Fast switching
• 175℃ operating temperature

Specification

• Drain-source voltage: 100V
• Drain-gate voltage: 100V
• Gate-source voltage: ±20V
• Continuous drain current:
  • At 25℃: 33A
  • At 100℃: 23A
• Pulsed drain current: 110A
• Maximum avalanche current: 16A
• Gate threshold voltage: 2V to 4V
• Drain-to-source leakage current: 25µA
• Gate-to-source forward leakage: 100nA
• Gate-to-source reverse leakage: -100nA
• Rise time: 35nS
• Fall time: 35nS
• Turn-on delay time: 11nS
• Turn-off delay time: 39nS
• Diode forward voltage: 1.2V
• Reverse recovery time: 115ns to 170ns
• Reverse recovery charge: 505nC to 760nC
• Maximum power dissipation: 130W
• Operating temperature: -55℃ to 175℃

Application

• Switching high power devices
• Motor speed control
• LED dimmer and flasher
• Converters and inverters circuits