IRF610 200V 3.3A N-Channel Power MOSFET

Features

• Single pulse avalanche energy rated
• Very fast switching speed
• Linear transfer characteristics 
• High input impedance

Specification

• Drain-to-source voltage: 200V
• Drain-to-gate voltage: 200
• Continuous drain current
  • At 25℃: 3.3A
  • At 100℃: 2.1A
• Pulsed drain current: 8A
• Gate-to-source voltage: ±20V
• Drain-to-source breakdown voltage: 200V
• Gate threshold voltage: 2V to 4V
• Turn-on delay time: 8ns to 12ns
• Rise time: 17ns to 26ns
• Turn-off delay time: 13ns to 21ns
• Fall time: 9ns to 13ns
• Reverse recovery time: 75ns to 310ns
• Reverse recovery charge: 0.33µC to 1.4µC