Features
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple drive requirements
Specification
- Source-drain voltage: 200V
- Gate-to-source voltage: ±20V
- Continuous drain current
- At 25℃: 5.2A
- At 100℃: 3.3A
- Pulsed drain current: 18A
- Drain-to-source breakdown voltage: 200V
- Gate threshold voltage: 2V to 4V
- Diode forward voltage: 1.8V
- Turn-on delay time: 7.2ns
- Rise time: 22ns
- Turn-off delay time: 19ns
- Fall time: 13ns
- Reverse recovery time: 150ns to 300ns
- Reverse recovery charge: 0.91µC to 1.8µC
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