IRF640 200V 18A N-Channel Power MOSFET


Product Details

  • Product: IRF640
  • Transistor type: MOSFET
  • Control channel: N-Channel
  • No of pins: 3
  • Package: TO-220AB
  • Mounting type: through hole
  • Package contains: 1 x IRF640 200V 18A N-Channel Power MOSFET

39.00 (ex. GST)

Features

  • Dynamic dv/dt capability
  • Fully avalanche rated
  • Advanced process technology
  • Fast switching 
  • Ease of paralleling
  • Simple drive requirement 
  • 175℃ operating temperature

Specification

  • Drain-source voltage: 200V
  • Drain-gate voltage: 200V
  • Gate-source voltage: ±20V
  • Continuous drain current:
    • At 25℃: 18A
    • At 100℃: 13A
  • Pulsed drain current: 72A
  • Maximum avalanche current: 18A
  • Gate threshold voltage: 2V to 4V
  • Drain-to-source leakage current: 25µA
  • Gate-to-source forward leakage: 100nA
  • Gate-to-source reverse leakage: -100nA
  • Rise time: 19nS
  • Fall time: 5.5nS
  • Turn-on delay time: 10nS
  • Turn-off delay time: 23nS
  • Diode forward voltage: 1.3V
  • Reverse recovery time: 167ns to 257ns
  • Reverse recovery charge: 929nC to 1394nC
  • Maximum power dissipation: 150W
  • Operating temperature: -55℃ to 175℃
SKU: 460 Category: Tag:

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