IRF644 250V 14A N-Channel Power MOSFET

Features

• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple drive requirements

Specification

• Gate-to-source voltage: ±20V
• Continuous drain current
  • At 25℃: 14A
  • At 100℃: 8.5A
• Pulsed drain current: 56A
• Avalanche current: 14A
• Drain-to-source breakdown voltage: 250V
• Gate threshold voltage: 2V to 4V
• Diode forward voltage: 1.8V
• Turn-on delay time: 11ns
• Rise time: 24ns
• Turn-off delay time: 53ns
• Fall time: 49ns
• Reverse recovery time: 250ns to 500ns
• Reverse recovery charge: 2.3µC to 4.6µC
• Operating and storage junction temperature: -55℃ to 150℃