IRF820 500V 2.5A N-Channel Power MOSFET

Features

• Dynamic dv/dt capability
• Fully avalanche rated
• Very low intrinsic capacitances
• Gate charge minimize

Specification

• Drain-source voltage: 500V
• Drain-gate voltage: 500V
• Gate-source voltage: ±20V
• Continuous drain current:
  • At 25℃: 2.5A
  • At 100℃: 1.6A
• Pulsed drain current: 10A
• Maximum avalanche current: 2.5A
• Gate threshold voltage: 2.0V to 4.5V
• Drain-to-source leakage current: 25µA to 250µA
• Gate-to-source forward leakage: -100nA
• Gate-to-source reverse leakage: 100nA
• Rise time: 12nS
• Fall time: 13nS
• Turn-on delay time: 8.1nS
• Turn-off delay time: 16nS
• Diode forward voltage: 1.6V
• Reverse recovery time: 330ns to 500ns
• Reverse recovery charge: 760nC to 1140nC
• Maximum power dissipation: 43W
• Operating temperature: -55℃ to 150℃