IRF9510 100V 4A P-Channel Power MOSFET

Features

• Dynamic dv/dt capability
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple drive requirement
• 175℃ operating temperature

Specification

• Drain-source voltage: -100V
• Drain-gate voltage: -100V
• Gate-source voltage: ±20V
• Continuous drain current:
  • At 25℃: -4A
  • At 100℃: -2.8A
• Pulsed drain current: -16A
• Maximum avalanche current: -4A
• Gate threshold voltage: -2V to -4V
• Drain-to-source leakage current: -100µA
• Gate-to-source forward leakage: -100nA
• Gate-to-source reverse leakage: 100nA
• Rise time: 27nS
• Fall time: 17nS
• Turn-on delay time: 10nS
• Turn-off delay time: 15nS
• Diode forward voltage: -5.5V
• Reverse recovery time: 82ns to 160ns
• Reverse recovery charge: 0.15µC to 0.30µC
• Maximum power dissipation: 43W
• Operating temperature: -55℃ to 170℃