IRF9540N 100V 23A P-Channel Power MOSFET

Features

• Dynamic dv/dt capability
• Advanced process technology
• Fully avalanche rated
• Fast switching
• 175℃ operating temperature

Specification

• Drain-source voltage: -100V
• Drain-gate voltage: -100V
• Gate-source voltage: ±20V
• Continuous drain current:
  • At 25℃: -23A
  • At 100℃: -16A
• Pulsed drain current: -76A
• Maximum avalanche current: -11A
• Gate threshold voltage: -2V to -4V
• Drain-to-source leakage current: -25µA
• Gate-to-source forward leakage: 100nA
• Gate-to-source reverse leakage: -100nA
• Rise time: 67nS
• Fall time: 51nS
• Turn-on delay time: 15nS
• Turn-off delay time: 51nS
• Diode forward voltage: -1.6V
• Reverse recovery time: 150ns to 220ns
• Reverse recovery charge: 830nC to 1200nC
• Maximum power dissipation: 140W
• Operating temperature: -55℃ to 175℃