IRF9634 250V 3.4A P-Channel Power MOSFET

Features

• Advance process technology
• Dynamic dv/dt rating
• 150℃ operating temperature
• Fast switching
• P-channel
• Fully avalanche rated

Specification

• Continuous drain current
  • At 25℃: -4.1A
  • At 100℃: -2.6A
• Pulsed drain current: -4.1A
• Gate-to-source voltage: ±20V
• Drain-to-source breakdown voltage: -250V
• Gate threshold voltage: -2V to -4V
• Diode forward voltage: -6.5V
• Turn-on delay time: 12ns
• Rise time: 23ns
• Turn-off delay time: 34ns
• Fall time: 21ns
• Reverse recovery time: 190ns to 290ns
• Reverse recovery charge: 1.5µC to 2.2µC