STP80NF55 80NF55 55V 80A N-Channel Power MOSFET

Features

• Exceptional dv/dt capability
• 100% avalanche tested
• Application-oriented characteristic
• Low input capacitance
• Low gate charge
• Low gate input resistance
• Standard TO-220 package 

Specification

• Drain-source voltage: 55V
• Gate-source voltage: ±20V
• Gate-source threshold voltage: 4V
• Continuous drain current
  • @25℃: 80A
  • @100℃: 80A
• Pulsed drain current: 320A
• Peak diode recovery voltage slope: 7V/ns
• Power dissipation: 300W
• Gate charge: 155nC
• Drain-source resistance: 6.5mohm
• Fall time: 35 ns
• Rise time: 115 ns
• Typical turn-off delay time: 75 ns
• Typical turn-on delay time: 20ns
• Operating temperature: -55℃ to +175℃

Application

• Switching application