Features
- High total power dissipation
- High Hfe
- Good linearity
- Low level and low noise transistor
Specification
- Collector-base voltage: 50V
- Collector-emitter voltage: 45V
- Emitter-base voltage: 5V
- Collector current: 100mA
- Collector power dissipation: 450mW
- DC current gain: 60Hfe to 1000Hfe
- Transition frequency: 150MHz
- Operating temperature: -55℃ to +150℃
Application
- General purpose switching and amplification application
- AF pre amplifier
- Class B amplifier
- Low noise stage audio equipments
- Push-pull circuit
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