2N60 2A 600V N Channel Power IGBT MOSFET

2N60 is an enhancement mode power field effect transistor. This advanced technology has been specially designed to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. 

Features

• High switching performance
• Low on-state resistance
• Low gate charge
• 100% avalanche tested

Specification

• Drain-source voltage: 600V
• Gate-source voltage: ±30V
• Gate threshold voltage: 3V to5V
• Drain current (continuous)
  • @25℃: 5.8A
  • @10025℃: 3.7A
• Drain current (pulsed): 23A
• Drain-source Diode forward voltage: 1.4V
• Rise time: 115ns to 240ns
• Fall time: 85ns to 180ns
• Turn-on delay time: 30ns to 70ns
• Turn-off delay time: 95ns to 200ns
• Diode reverse recovery time: 380ns
• Diode reverse recovery charge: 3.5µC
• Gate-source charge: 8.6nC
• Gate-drain charge: 21nC
• Total gate charge: 42nC to 54nC
• Maximum power dissipation: 55W
• Operating temperature: -55℃ to +150℃