IRF530 100V 17A N-Channel Power MOSFET

Features

• Dynamic dv/dt capability
• Advanced process technology
• Ultra low on-resistance 
• Fully avalanche rated
• Fast switching
• 175℃ operating temperature

Specification

• Drain-source voltage: 100V
• Drain-gate voltage: 100V
• Gate-source voltage: ±20V
• Continuous drain current:
  • At 25℃: 17A
  • At 100℃: 12A
• Pulsed drain current: 60A
• Maximum avalanche current: 9A
• Gate threshold voltage: 2V to 4V
• Drain-to-source leakage current: 25µA
• Gate-to-source forward leakage: 100nA
• Gate-to-source reverse leakage: -100nA
• Rise time: 22nS
• Fall time: 25nS
• Turn-on delay time: 9.2nS
• Turn-off delay time: 35nS
• Diode forward voltage: 1.3V
• Reverse recovery time: 93ns to 140ns
• Reverse recovery charge: 320nC to 480nC
• Maximum power dissipation: 70W
• Operating temperature: -55℃ to 175℃