IRF9Z34 60V 18A P-Channel Power MOSFET

Features

• Dynamic dv/dt capability
• Advanced process technology
• Fully avalanche rated
• Fast switching
• 175℃ operating temperature

Specification

• Drain-source voltage: -55V
• Drain-gate voltage: -55V
• Gate-source voltage: ±20V
• Continuous drain current:
  • At 25℃: -19A
  • At 100℃: -14A
• Pulsed drain current: -68A
• Maximum avalanche current: -10A
• Gate threshold voltage: -2V to -4V
• Drain-to-source leakage current: -25µA
• Gate-to-source forward leakage: 100nA
• Gate-to-source reverse leakage: -100nA
• Rise time: 55nS
• Fall time: 41nS
• Turn-on delay time: 13nS
• Turn-off delay time: 30nS
• Diode forward voltage: -1.6V
• Reverse recovery time: 54ns to 82ns
• Reverse recovery charge: 110nC to 160nC
• Maximum power dissipation: 68W
• Operating temperature: -55℃ to 175℃