IRFB4321 150V 85A N-Channel Power MOSFET

Features

• Dynamic dv/dt capability
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple drive requirement

Specification

• Drain-source voltage: 150V
• Drain-gate voltage: 150V
• Gate-source voltage: ±30V
• Continuous drain current:
  • At 25℃: 85A
  • At 100℃: 60A
• Pulsed drain current: 330A
• Gate threshold voltage: 3V to 5V
• Drain-to-source leakage current: 20µA
• Gate-to-source forward leakage: 100nA
• Gate-to-source reverse leakage: -100nA
• Rise time: 60nS
• Fall time: 35nS
• Turn-on delay time: 18nS
• Turn-off delay time: 25nS
• Maximum power dissipation: 350W
• Operating temperature: -55℃ to 175℃

Application

• Motion control application
• High efficiency synchronous rectification in SMPS
• Uninterrupted power supply
• Hard switched and high frequency circuits