K50T60 High Power MOSFET IGBT

Features

• Very low Vce (typ. 1.5V)
• Short circuit withstand time 5µs
• Very tight parameter distribution
• High ruggedness, temperature stable behavior
• Very high switching speed
• Positive temperature coefficient in Vce
• Low EMI
• Low gate charge
• Very soft, fast recovery antiparallel Emitter Collectrolled HE diode

Specification

• Collector-emitter breakdown voltage: 600V
• Collector-emitter saturation voltage: 1.5V to 2V
• Gate-emitter voltage: ±20V
• Gate-emitter threshold voltage: 4.1V to 5.7V
• Diode forward voltage: 1.65V to 2.05V
• DC collector current:
  • @25℃: 80A
  • @100℃: 50A
• Pulsed collector current: 150A
• Diode forward current:
  • 25℃: 100A
  • 100℃: 50A
• Diode pulsed current: 150A
• Short circuit withstand time: 5µs
• Total power dissipation: 333W
• Operating temperature: -40℃ to +175℃

Application

• Frequency converters
• Uninterrupted power supply