55N10 is a 199V 55A N-channel enhancement mode power field effect transistor. This device is specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and communication mode. These devices are well suited for low voltage applications such as audio amplifiers, high efficiency switching Dc to DC converters, and DC motor control.
Features
- Low gate charge
- Fast switching
- 100% avalanche tested
Specification
- Drain-source voltage: 100V
- Gate-source voltage: ±25V
- Gate threshold voltage: 2V to 4V
- Continuous drain current:
- At 25℃: 55A
- At 100℃: 38.9A
- Pulsed drain current: 220A
- Avalanche current: 55A
- Drain-source diode forward voltage: 1.5V
- Operating and storage temperature: -55℃ to 175℃
Application
- Low voltage switching and amplifier applications
- Audio amplifier
- DC to DC converters
- DC motor control
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