IRF1010 -60V 48A N-Channel Power MOSFET

Features

• Dynamic dv/dt capability
• Fully avalanche rated
• Advanced process technology
• Ultra low on-resistance
• Fast switching 
• 175℃ operating temperature

Specification

• Drain-source voltage: 60V
• Drain-gate voltage: 60V
• Gate-source voltage: ±20V
• Continuous drain current:
  • At 25℃: 57A
  • At 100℃: 40A
• Pulsed drain current: 330A
• Maximum avalanche current: 50A
• Gate threshold voltage: 2V to 4V
• Drain-to-source leakage current: 25µA
• Gate-to-source forward leakage: 100nA
• Gate-to-source reverse leakage: -100nA
• Rise time: 78nS
• Fall time: 53nS
• Turn-on delay time: 12nS
• Turn-off delay time: 48nS
• Diode forward voltage: 1.3V
• Reverse recovery time: 73ns to 110ns
• Reverse recovery charge: 220nC to 330nC
• Maximum power dissipation: 200W
• Operating temperature: -55℃ to 175℃