IRFBE30 800V 4.1A N-Channel Power MOSFET

Features

• High dv/dt capability
• Repetitive avalanche rated
• Very low intrinsic capacitance
• Gate charge minimized
• Fast switching
• Ease of paralleling
• Simple drive requirement

Specification

• Drain-source voltage: 800V
• Drain-gate voltage: 800V
• Gate-source voltage: ±20V
• Continuous drain current:
  • At 25℃: 4.1A
  • At 100℃: 2.6A
• Pulsed drain current: 16A
• Repetitive avalanche current: 4.1A
• Maximum power dissipation: 125W
• Operating temperature: -55℃ to 150℃

Application

• High current, high-speed switching
• Switch mode power supply (SMPS)
• DC-AC converters for power supply and motor driver