2N60 is an enhancement mode power field effect transistor. This advanced technology has been specially designed to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Features
- High switching performance
- Low on-state resistance
- Low gate charge
- 100% avalanche tested
Specification
- Drain-source voltage: 600V
- Gate-source voltage: ±30V
- Gate threshold voltage: 3V to5V
- Drain current (continuous)
- Drain current (pulsed): 23A
- Drain-source Diode forward voltage: 1.4V
- Rise time: 115ns to 240ns
- Fall time: 85ns to 180ns
- Turn-on delay time: 30ns to 70ns
- Turn-off delay time: 95ns to 200ns
- Diode reverse recovery time: 380ns
- Diode reverse recovery charge: 3.5µC
- Gate-source charge: 8.6nC
- Gate-drain charge: 21nC
- Total gate charge: 42nC to 54nC
- Maximum power dissipation: 55W
- Operating temperature: -55℃ to +150℃
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