IRF1407 -75V 130A N-Channel Power MOSFET

Features

• Dynamic dv/dt capability
• Repetitive avalanche rated
• Ultra low on-resistance 
• Advanced process technology
• Fast switching 
• 175℃ operating temperature

Specification

• Drain-source voltage: 75V
• Drain-gate voltage: 75V
• Gate-source voltage: ±20V
• Continuous drain current:
  • At 25℃: 100A
  • At 100℃: 70A
• Pulsed drain current: 520A
• Gate threshold voltage: 2V to 4V
• Drain-to-source leakage current: 20µA
• Gate-to-source forward leakage: 200nA
• Gate-to-source reverse leakage: -200nA
• Rise time: 150nS
• Fall time: 140nS
• Turn-on delay time: 1nS
• Turn-off delay time: 150nS
• Diode forward voltage: 1.3V
• Reverse recovery time: 110ns to 170ns
• Reverse recovery charge: 390nC to 590nC
• Maximum power dissipation: 3.8W
• Operating temperature: -55℃ to 175℃