IRF3205 N-Channel HexFET Power MOSFET Original IC

IRF3205 is an advanced HexFET power MOSFET from an international rectifier (Infineon). It uses the advanced processing technique to get extremely low on-resistance per silicon area, fast switching, and ruggedized device design. The MOSFET has a TO-220 package which is most commonly preferred commercially.

Specification

• drain-to-source voltage: 55V
• gate-to-source voltage: ±20V
• Continuous drain current: 80A
• Pulsed drain current: 390A
• Avalanche current: 62A
• Static drain to source on-resistance: 8mΩ
• Gate threshold voltage: 2V to 4V
• Rise time: 101ns
• Fall time: 65ns