IRF5305 55V 31A P-Channel Power MOSFET

Features

• Dynamic dv/dt capability
• Advanced process technology
• Fully avalanche rated
• Fast switching
• 175℃ operating temperature

Specification

• Drain-source voltage: -55V
• Drain-gate voltage: -55V
• Gate-source voltage: ±20V
• Continuous drain current:
  • At 25℃: -31A
  • At 100℃: -22A
• Pulsed drain current: -110A
• Maximum avalanche current: -16A
• Gate threshold voltage: -2V to -4V
• Drain-to-source leakage current: –    25µA
• Gate-to-source forward leakage: 100nA
• Gate-to-source reverse leakage: -100nA
• Rise time: 66nS
• Fall time: 63nS
• Turn-on delay time: 14nS
• Turn-off delay time: 39nS
• Diode forward voltage: -1.3V
• Reverse recovery time: 71ns to 110ns
• Reverse recovery charge: 170nC to 250nC
• Maximum power dissipation: 110W
• Operating temperature: -55℃ to 175℃