IRF720 400V 3.3A N-Channel Power MOSFET

Features

• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple drive requirements

Specification

• Gate-to-source voltage: ±20V
• Continuous drain current
  • At 25℃: 3.3A
  • At 100℃: 2.1A
• Pulsed drain current: 13A
• Avalanche current: 3.3A
• Drain-to-source breakdown voltage: 400V
• Gate threshold voltage: 2V to 4V
• Diode forward voltage: 1.6V
• Turn-on delay time: 10ns
• Rise time: 14ns
• Turn-off delay time: 30ns
• Fall time: 13ns
• Reverse recovery time: 270ns to 600ns
• Reverse recovery charge: 1.4µC to 3µC
• Operating and storage junction temperature: -55℃ to 150℃