IRF9630 200V 6.5A P-Channel Power MOSFET

Features

• Dynamic dv/dt capability
• Advanced process technology
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple drive requirement

Specification

• Drain-source voltage: -200V
• Drain-gate voltage: -200V
• Gate-source voltage: ±20V
• Continuous drain current:
  • At 25℃: -6.5A
  • At 100℃: -4A
• Pulsed drain current: -26A
• Maximum avalanche current: -6.4A
• Gate threshold voltage: -2V to -4V
• Drain-to-source leakage current: -100µA
• Gate-to-source forward leakage: 100nA
• Gate-to-source reverse leakage: -100nA
• Rise time: 27nS
• Fall time: 24nS
• Turn-on delay time: 12nS
• Turn-off delay time: 28nS
• Diode forward voltage: -6.5V
• Reverse recovery time: 200ns to 300ns
• Reverse recovery charge: 1.9µC to 2.9µC
• Maximum power dissipation: 74W
• Operating temperature: -55℃ to 150℃