IRF9640 200V 11A P-Channel Power MOSFET

Features

• Dynamic dv/dt rating
• Repetitive avalanche rated
• P-channel
• Fast switching
• Ease of paralleling
• Simple drive requirement

Specification

• Continuous drain current
  • At 25℃: -11A
  • At 100℃: -6.8A
• Pulsed drain current: -44A
• Avalanche current: -11A
• Gate-to-source voltage: ±20V
• Drain-to-source breakdown voltage: -200V
• Gate threshold voltage: -2V to -4V
• Diode forward voltage: -5V
• Turn-on delay time: 14ns
• Rise time: 43ns
• Turn-off delay time: 39ns
• Fall time: 38ns
• Reverse recovery time: 250ns to 300ns
• Reverse recovery charge: 2.9µC to 3.6µC