IRFB4110 100V 180A N-Channel Power MOSFET

Features

• Dynamic dv/dt capability
• Advanced process technology
• Fully avalanche rated
• Fast switching

Specification

• Drain-source voltage: 100V
• Drain-gate voltage: 100V
• Gate-source voltage: ±20V
• Continuous drain current:
  • At 25℃: 180A
  • At 100℃: 130A
• Pulsed drain current: 670A
• Gate threshold voltage: 2V to 4V
• Drain-to-source leakage current: 20µA
• Gate-to-source forward leakage: 100nA
• Gate-to-source reverse leakage: -100nA
• Rise time: 67nS
• Fall time: 88nS
• Turn-on delay time: 25ns
• Turn-off delay time: 78ns
• Diode forward voltage: 1.3V
• Reverse recovery time: 50ns to 90ns
• Reverse recovery charge: 94nC to 140nC
• Reverse recovery current: 3.5A
• Maximum power dissipation: 370W
• Operating temperature: -55℃ to 175℃

Application

• Motion control application
• High efficiency synchronous rectification in SMPS
• Uninterrupted power supply
• Hard switched and high frequency circuits