IRFBC30 600V 3.6A N-Channel Power MOSFET

Features

• Low gate charge, results in simple drive requirement
• Improved gate, avalanche, and dynamic dv/dt rating
• Fully characterized capacitance and avalanche voltage and current  

Specification

• Continuous drain current
  • At 25℃: 3.5A
  • At 100℃: 2.3A
• Pulsed drain current: 14A
• Avalanche current: 3.6A
• Gate-to-source voltage: ±30V
• Drain-to-source breakdown voltage: 600V
• Gate threshold voltage: 2V to 4.5V
• Diode forward voltage: 1.6V
• Turn-on delay time: 9.8ns
• Rise time: 13ns
• Turn-off delay time: 19ns
• Fall time: 12ns
• Reverse recovery time: 400ns to 600ns
• Reverse recovery charge: 1.1µC to 1.7µC

Application

• Switch mode power supply (SMPS)
• Uninterrupted power supply
• High speed power switching